English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | PowerTrench® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | 2 P-Channel (Dual) |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 20V |
| 电流 - 连续漏极 (id) @ 25°c: | 5A |
| rds on (max) @ id, vgs: | 44mOhm @ 5A, 4.5V |
| vgs(th) (最大值) @ id: | 1.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 14nC @ 4.5V |
| 输入电容 (ciss) (max) @ vds: | 992pF @ 10V |
| 功率 - 最大值: | 900mW |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 6-SSOT Flat-lead, SuperSOT™-6 FLMP |
| 供应商设备包: | SuperSOT™-6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
PHC2300,118Nexperia |
MOSFET N/P-CH 300V 8SOIC |
|
IRF7311TRIR (Infineon Technologies) |
MOSFET 2N-CH 20V 6.6A 8-SOIC |
|
EPC2106ENGRTEPC |
GAN TRANS 2N-CH 100V BUMPED DIE |
|
APTM100TDU35PGMicrosemi |
MOSFET 6N-CH 1000V 22A SP6-P |
|
IRF7331TRIR (Infineon Technologies) |
MOSFET 2N-CH 20V 7A 8-SOIC |
|
SI4966DY-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 20V 8SOIC |
|
SI4388DY-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 30V 10.7A 8-SOIC |
|
AO6800LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH DUAL 30V 6TSOP |
|
SI7960DP-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 60V 6.2A PPAK SO-8 |
|
SI1016X-T1-E3Vishay / Siliconix |
MOSFET N/P-CH 20V SOT563F |
|
LP1030DK1-GRoving Networks / Microchip Technology |
MOSFET 2P-CH 300V SOT23-5 |
|
SI4944DY-T1-E3Vishay / Siliconix |
MOSFET 2N-CH 30V 9.3A 8-SOIC |
|
SIS902DN-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 75V 4A PPAK 1212-8 |
