English
简体中文
DIODE GPP 2A 100V DO-214AC
DC DC CONVERTER +/-5V 3W
MOSFET 2P-CH 30V 5A 8SOIC
400MA INDUCTOR BUILT-IN PWM STEP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | 2 P-Channel (Dual) |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 30V |
| 电流 - 连续漏极 (id) @ 25°c: | 5A |
| rds on (max) @ id, vgs: | 48mOhm @ 5A, 10V |
| vgs(th) (最大值) @ id: | 1.3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 9nC @ 4.5V |
| 输入电容 (ciss) (max) @ vds: | 780pF @ 15V |
| 功率 - 最大值: | 2W |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SI7958DP-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 40V 7.2A PPAK SO-8 |
|
SI4830CDY-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 30V 8A 8-SOIC |
|
SI4563DY-T1-GE3Vishay / Siliconix |
MOSFET N/P-CH 40V 8A 8-SOIC |
|
SIA513DJ-T1-GE3Vishay / Siliconix |
MOSFET N/P-CH 20V 4.5A SC70-6 |
|
SIA920DJ-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 8V 4.5A SC-70 |
|
AO4606LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 8SOIC |
|
SI7222DN-T1-E3Vishay / Siliconix |
MOSFET 2N-CH 40V 6A 1212-8 |
|
NTJD4001NT2GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 0.25A SOT363 |
|
FDS6961A_F011Sanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 3.5A 8SOIC |
|
EMH2407-S-TL-HXSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 20V 6A EMH8 |
|
TPCF8201(TE85L,F,MToshiba Electronic Devices and Storage Corporation |
MOSFET 2N-CH 20V 3A VS-8 |
|
SI4940DY-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 40V 4.2A 8-SOIC |
|
SP8M3FU7TB1ROHM Semiconductor |
MOSFET N/P-CH 30V 8SOP |