类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
场效应管类型: | 2 N-Channel (Half Bridge) |
场效应管特征: | Logic Level Gate |
漏源电压 (vdss): | 30V |
电流 - 连续漏极 (id) @ 25°c: | 6.6A, 8.1A |
rds on (max) @ id, vgs: | 20mOhm @ 6.6A, 10V |
vgs(th) (最大值) @ id: | 2.4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 6.5nC @ 10V |
输入电容 (ciss) (max) @ vds: | 460pF @ 15V |
功率 - 最大值: | 1.4W |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 8-WDFN Exposed Pad |
供应商设备包: | 8-DFN (3x3) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SI4562DY-T1-GE3Vishay / Siliconix |
MOSFET N/P-CH 20V 8-SOIC |
|
AO4850Alpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 75V 2.3A 8SOIC |
|
AO4822AL_102Alpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 30V 8A 8SOIC |
|
SSM6N42FE(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
MOSFET 2N-CH 20V 0.8A ES6 |
|
AOC2802_001Alpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 4WLCSP |
|
SI7872DP-T1-E3Vishay / Siliconix |
MOSFET 2N-CH 30V 6.4A PPAK SO-8 |
|
PMGD400UN,115NXP Semiconductors |
MOSFET 2N-CH 30V 0.71A 6TSSOP |
|
IRF7750TRPBFIR (Infineon Technologies) |
MOSFET 2P-CH 20V 4.7A 8TSSOP |
|
AO4914LAlpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 30V 8A |
|
PMGD175XNEAXNexperia |
MOSFET 2 N-CH 30V 900MA SOT363 |
|
BSO303PNTMA1IR (Infineon Technologies) |
MOSFET 2P-CH 30V 8.2A 8DSO |
|
SP8M9FU6TBROHM Semiconductor |
MOSFET N/P-CH 30V 9A/5A 8SOIC |
|
AO4805L_101Alpha and Omega Semiconductor, Inc. |
MOSFET 2P-CH 30V 9A 8-SOIC |