English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 场效应管特征: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 功率 - 最大值: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
APTM100H45FT3GRoving Networks / Microchip Technology |
MOSFET 4N-CH 1000V 18A SP3 |
|
|
STL52DN4LF7AGSTMicroelectronics |
AUTOMOTIVE-GRADE DUAL N-CHANNEL |
|
|
PMDXB600UNEL,147Rochester Electronics |
0.6A, 20V, 2-ELEMENT, N CHANNEL, |
|
|
MRF9030MBR1Rochester Electronics |
RF ULTRA HIGH FREQUENCY BAND, N- |
|
|
APTC60HM70BT3GRoving Networks / Microchip Technology |
MOSFET 4N-CH 600V 39A SP3 |
|
|
MRF9060MR1Rochester Electronics |
RF ULTRA HIGH FREQUENCY BAND, N- |
|
|
IRF9622156Rochester Electronics |
3A, 200V, 2.4OHM, P-CHANNEL, POW |
|
|
APTC80A10SCTGRoving Networks / Microchip Technology |
MOSFET 2N-CH 800V 42A SP4 |
|
|
FS10KMJ-2#B01Rochester Electronics |
HIGH SPEED SWITCHING N-CHANNEL |
|
|
FQPF9N25CRDTURochester Electronics |
8.8A, 250V, N-CHANNEL, MOSFET |
|
|
FS70KMJ-2#B00Rochester Electronics |
70A, 100V, N-CHANNEL MOSFET |
|
|
TPIC2401KTARochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
|
DMPH6050SPD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2 P-CH 26A POWERDI5060-8 |
