类型 | 描述 |
---|---|
系列: | HiPerFET™, Polar3™ |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | 2 N-Channel (Dual) |
场效应管特征: | Standard |
漏源电压 (vdss): | 500V |
电流 - 连续漏极 (id) @ 25°c: | 30A (Tc) |
rds on (max) @ id, vgs: | 110mOhm @ 30A, 10V |
vgs(th) (最大值) @ id: | 5V @ 4mA |
栅极电荷 (qg) (max) @ vgs: | 96nC @ 10V |
输入电容 (ciss) (max) @ vds: | 6250pF @ 25V |
功率 - 最大值: | 320W |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 24-SMD Module, 9 Leads |
供应商设备包: | 24-SMPD |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FX205-TL-E-ONRochester Electronics |
P-CHANNEL SILICON MOSFET |
|
2SK2631-ERochester Electronics |
POWER MOSFET |
|
DMT6018LDR-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 41V 60V V-DFN3030- |
|
DMN65D8LDWQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 60V 180MA SOT363 |
|
SI1036X-T1-GE3Vishay / Siliconix |
MOSFET 2 N-CH 30V 610MA SC89-6 |
|
APTM20HM08FGRoving Networks / Microchip Technology |
MOSFET 4N-CH 200V 208A SP6 |
|
NTTFD4D0N04HLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET, POWER, 40V POWERTRENCH P |
|
FW340-M-TL-E-SYRochester Electronics |
N CHANNEL AND P CHANNEL SILICON |
|
CPH6616-TL-ERochester Electronics |
N-CHANNEL SILICON MOSFET |
|
NTL4502NT1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
VKM60-01P1Wickmann / Littelfuse |
MOSFET 4N-CH 100V 75A ECO-PAC2 |
|
NTMFD5C462NLT1GSanyo Semiconductor/ON Semiconductor |
T6 40V LL S08FL DS |
|
NTTFS5C471NLTAGSanyo Semiconductor/ON Semiconductor |
AFSM T6 40V LL U8FL |