English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Box |
| 零件状态: | Active |
| 场效应管类型: | - |
| 场效应管特征: | - |
| 漏源电压 (vdss): | 700V |
| 电流 - 连续漏极 (id) @ 25°c: | 538A (Tc) |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 功率 - 最大值: | - |
| 工作温度: | - |
| 安装类型: | Chassis Mount |
| 包/箱: | Module |
| 供应商设备包: | D3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MRF6VP121KHR5178Rochester Electronics |
LATERAL N CHANNEL BROADBAND RF , |
|
|
DMN3022LFG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V-30V POWERDI333 |
|
|
DMC2990UDJQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V 24V SOT963 |
|
|
DMT2005UDV-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V-24V POWERDI3333 |
|
|
NVMFWD030N06CT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH DUAL 60V SO8FL |
|
|
MCH3360-TL-ERochester Electronics |
P-CHANNEL SILICON MOSFET |
|
|
MCH3360-TL-E-ONRochester Electronics |
P-CHANNEL SILICON MOSFET |
|
|
BB305CEW-TL-ERochester Electronics |
RF N |
|
|
FW803-TL-ERochester Electronics |
N-CHANNEL SILICON MOSFET |
|
|
APTML602U12R020T3AGRoving Networks / Microchip Technology |
MOSFET 2N-CH 600V 45A SP3 |
|
|
BSO211PNTMA1Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 4 |
|
|
FW256-TL-E-ONRochester Electronics |
N-CHANNEL SILICON MOSFET |
|
|
2SJ634-ERochester Electronics |
8A, 60V, P-CHANNEL MOSFET |
