类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | 2 N-Channel (Half Bridge) |
场效应管特征: | Standard |
漏源电压 (vdss): | 1000V (1kV) |
电流 - 连续漏极 (id) @ 25°c: | 36A |
rds on (max) @ id, vgs: | 270mOhm @ 18A, 10V |
vgs(th) (最大值) @ id: | 5V @ 5mA |
栅极电荷 (qg) (max) @ vgs: | 308nC @ 10V |
输入电容 (ciss) (max) @ vds: | 8700pF @ 25V |
功率 - 最大值: | 694W |
工作温度: | -40°C ~ 150°C (TJ) |
安装类型: | Chassis Mount |
包/箱: | SP4 |
供应商设备包: | SP4 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
2SJ662-DL-ERochester Electronics |
P-CHANNEL SILICON MOSFET |
|
FDSS2407S_B82086Rochester Electronics |
3.3A, 62V, 0.11OHM, 2-ELEMENT, |
|
APTM50H15FT1GRoving Networks / Microchip Technology |
MOSFET 4N-CH 500V 25A SP1 |
|
HUF75645S3ST_QRochester Electronics |
N CHANNEL ULTRAFET 100V, 75A, 1 |
|
FS50KM-06-AX#E51Rochester Electronics |
DISCRETE / POWER MOSFET |
|
MCB20P1200LB-TUBWickmann / Littelfuse |
MCB20P1200LB-TUB |
|
PMXB43UNE,147Rochester Electronics |
20V, N CHANNEL TRENCH MOSFET |
|
VEC2415-TL-ERochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
SQJ912AEP-T2_BE3Vishay / Siliconix |
MOSFET 2N-CH 40V 30A PPAK SO-8 |
|
FS5AS-06-T13#B21Rochester Electronics |
HIGH SPEED SWITCHING N CHANNEL , |
|
DMN3016LDV-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2 N-CH 21A POWERDI3333-8 |
|
EFC2J004NUZTDGSanyo Semiconductor/ON Semiconductor |
MOSFET NCH 12V WLCSP6 DUAL |
|
FX20KMJ-06#B00Rochester Electronics |
HIGH SPEED SWITCHING P CHANNEL , |