CRGP 2010 560R 1%
CONN 30-36AWG CRIMP GOLD
KIT DESIGN ACCELERATOR POE CONV
MOSFET, POWER, 60V POWERTRENCH P
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | 2 N-Channel (Dual) |
场效应管特征: | Standard |
漏源电压 (vdss): | 60V |
电流 - 连续漏极 (id) @ 25°c: | 9A (Ta), 38A (Tc) |
rds on (max) @ id, vgs: | 9mOhm @ 10A, 10V |
vgs(th) (最大值) @ id: | 2V @ 50µA |
栅极电荷 (qg) (max) @ vgs: | 13.5nC @ 10V |
输入电容 (ciss) (max) @ vds: | 948pF @ 30V |
功率 - 最大值: | 1.7W (Ta), 26W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 12-PowerWQFN |
供应商设备包: | 12-WQFN (3.3x3.3) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BSM600D12P3G001ROHM Semiconductor |
1200V, 576A, HALF BRIDGE, FULL S |
|
DMN3022LDG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V-30V POWERDI333 |
|
CPH3338-TL-HRochester Electronics |
P-CHANNEL SILICON MOSFET |
|
RF1S530SM9AS2457Rochester Electronics |
N-CHANNEL, POWER MOSFET |
|
DMT3009LEV-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 25V~30V POWERDI3333-8 |
|
IRFPC42Rochester Electronics |
3.9A, 1000V, 4.2 OHM, N-CHANNEL |
|
CPH6413-TLD-ERochester Electronics |
N-CHANNEL MOSFET |
|
MTB6N60ET4Rochester Electronics |
6A, 600V, 1.2OHM, N-CHANNEL |
|
APTC60DHM24T3GRoving Networks / Microchip Technology |
MOSFET 2N-CH 600V 95A SP3 |
|
FDD6N50RTFRochester Electronics |
6A, 500V, N-CHANNEL, MOSFET |
|
SMA5112Sanken Electric Co., Ltd. |
MOSFET 6N-CH 250V 7A 12-SIP |
|
APTM50HM65FTGRoving Networks / Microchip Technology |
MOSFET 4N-CH 500V 51A SP4 |
|
CPH3422-TL-ERochester Electronics |
N-CHANNEL MOSFET |