English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, TrenchMOS™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Half Bridge) |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 40V |
| 电流 - 连续漏极 (id) @ 25°c: | 98A (Ta) |
| rds on (max) @ id, vgs: | 4.2mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 3.6V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 37nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 25V |
| 功率 - 最大值: | 85W (Ta) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | SOT-1205, 8-LFPAK56 |
| 供应商设备包: | LFPAK56D |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DMT47M2LDVQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 31V-40V POWERDI333 |
|
|
CPH6413-TLD-E-ONRochester Electronics |
N-CHANNEL MOSFET |
|
|
NVMFD5C668NLWFT1GSanyo Semiconductor/ON Semiconductor |
T6 60V S08FL DUAL |
|
|
IRF610S2497Rochester Electronics |
3.3A 200V 1.500 OHM N-CHANNEL |
|
|
BSM120C12P2C201ROHM Semiconductor |
1200V, 134A, CHOPPER, SILICON-CA |
|
|
PMN27XPEA,115Rochester Electronics |
4.4A, 20V, 6-ELEMENT, P CHANNEL, |
|
|
SQJ951EP-T1_BE3Vishay / Siliconix |
MOSFET 2P-CH 30V 30A PPAK |
|
|
DMC2990UDJQ-7BZetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V 24V SOT963 |
|
|
FDY4001CZCTRochester Electronics |
MOSFET N/P-CH 20V SC89-6 |
|
|
AOCA32108EAlpha and Omega Semiconductor, Inc. |
12V COMMON-DRAIN DUAL N-CHANNEL |
|
|
RFD16N02LRochester Electronics |
16A, 20V, 0.022 OHM, N-CHANNEL L |
|
|
DMN3016LDN-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2 N-CH 9.2A VDFN3030-8 |
|
|
SMA5127Sanken Electric Co., Ltd. |
MOSFET 3N/3P-CH 60V 4A 12-SIP |
