English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Half Bridge) |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 30V |
| 电流 - 连续漏极 (id) @ 25°c: | 10A (Ta), 20A (Tc) |
| rds on (max) @ id, vgs: | 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V |
| vgs(th) (最大值) @ id: | 2.1V @ 250µA, 1.15V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 6.1nC, 12.6nC @ 4.5V |
| 输入电容 (ciss) (max) @ vds: | 850pF, 1480pF @ 15V |
| 功率 - 最大值: | 2.2W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-PowerLDFN |
| 供应商设备包: | PowerDI3333-8 (Type D) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SCH1402-S-TL-E-SYRochester Electronics |
N-CHANNEL MOSFET |
|
|
FDMS5361LRochester Electronics |
N-CHANNEL 60V 35A POWER MOSFET |
|
|
FX205-TL-ERochester Electronics |
P-CHANNEL SILICON MOSFET |
|
|
APTM100H46FT3GRoving Networks / Microchip Technology |
MOSFET 4N-CH 1000V 19A SP3 |
|
|
FS70KM-06#B00Rochester Electronics |
70A, 100V, N-CHANNEL MOSFET |
|
|
NVMFD030N06CT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 8DFN 5X6 |
|
|
2SK1736-AZRochester Electronics |
N-CHANNEL SILICON MOSFET |
|
|
DMN63D1LV-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2 N-CH 60V 550MA SOT563 |
|
|
MSCSM120AM027CD3AGRoving Networks / Microchip Technology |
PM-MOSFET-SIC-SBD~-D3 |
|
|
2SJ655-MG5Rochester Electronics |
GENERAL-PURPOSE SWITCHING DEVICE |
|
|
DMN3016LDV-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2 N-CH 21A POWERDI3333-8 |
|
|
WAB400M12BM3Wolfspeed - a Cree company |
1200 V, 400 A HALF-BRIDGE MODULE |
|
|
APTC60HM45SCTGRoving Networks / Microchip Technology |
MOSFET 4N-CH 600V 49A SP4 |
