类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | 4 N-Channel (H-Bridge) |
场效应管特征: | Standard |
漏源电压 (vdss): | 600V |
电流 - 连续漏极 (id) @ 25°c: | 39A |
rds on (max) @ id, vgs: | 70mOhm @ 39A, 10V |
vgs(th) (最大值) @ id: | 3.9V @ 2.7mA |
栅极电荷 (qg) (max) @ vgs: | 259nC @ 10V |
输入电容 (ciss) (max) @ vds: | 7000pF @ 25V |
功率 - 最大值: | 250W |
工作温度: | -40°C ~ 150°C (TJ) |
安装类型: | Chassis Mount |
包/箱: | SP3 |
供应商设备包: | SP3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MRF8S21100HSR3,128Rochester Electronics |
RF S BAND, N-CHANNEL, MOSFET |
|
IRFR21496Rochester Electronics |
2.2A 250V 2.000 OHM N-CHANNEL |
|
APTM50DHM38GRoving Networks / Microchip Technology |
MOSFET 2N-CH 500V 90A SP6 |
|
DMPH6050SPDQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2 P-CH 26A POWERDI5060-8 |
|
RF1S50N06SM9AS2551Rochester Electronics |
50A, 60V, 0.022 OHM, ESD RATED, |
|
DMN16M9UCA6-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2 N-CHANNEL X3-DSN2718-6 |
|
STL64DN4F7AGSTMicroelectronics |
MOSFET N-CH 40V 40A POWERFLAT |
|
APTM50HM75FT3GRoving Networks / Microchip Technology |
MOSFET 4N-CH 500V 46A SP3 |
|
FSS248-TL-ERochester Electronics |
N-CHANNEL MOSFET |
|
AONP36336Alpha and Omega Semiconductor, Inc. |
30V DUAL ASYMMETRIC N-CHANNEL MO |
|
OP524,005WeEn Semiconductors Co., Ltd |
OP524/UNCASED/NO MARK*CHIPS ON |
|
FS10ASJ-2-T13#B00Rochester Electronics |
HIGH SPEED SWITCHING N-CHANNEL |
|
FW340-TL-E-ONRochester Electronics |
N CHANNEL AND P CHANNEL SILICON |