类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Box |
零件状态: | Active |
场效应管类型: | 2 N-Channel (Half Bridge) |
场效应管特征: | Silicon Carbide (SiC) |
漏源电压 (vdss): | 1200V (1.2kV) |
电流 - 连续漏极 (id) @ 25°c: | 640A (Tc) |
rds on (max) @ id, vgs: | 2.97mOhm @ 480A, 15V |
vgs(th) (最大值) @ id: | 3.6V @ 160mA |
栅极电荷 (qg) (max) @ vgs: | 15V |
输入电容 (ciss) (max) @ vds: | 800V |
功率 - 最大值: | - |
工作温度: | -40°C ~ 175°C (TJ) |
安装类型: | Chassis Mount |
包/箱: | Module |
供应商设备包: | Module |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MSCSM120AM042CD3AGRoving Networks / Microchip Technology |
PM-MOSFET-SIC-SBD~-D3 |
|
APTM100DSK35T3GRoving Networks / Microchip Technology |
MOSFET 2N-CH 1000V 22A SP3 |
|
FSS248-TL-E-SYRochester Electronics |
N-CHANNEL MOSFET |
|
APTM50AM24SCGRoving Networks / Microchip Technology |
MOSFET 2N-CH 500V 150A SP6 |
|
DMN3012LDG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V-30V POWERDI333 |
|
SQJB46EP-T1_GE3Vishay / Siliconix |
AUTOMOTIVE DUAL N-CHANNEL 40 V ( |
|
MRF6VP11KHR5,178Rochester Electronics |
LATERAL N-CHANNEL BROADBAND RF |
|
TM3055-TL-ERochester Electronics |
N-CHANNEL MOSFET |
|
IRFU220S2497Rochester Electronics |
4.6A 200V 0.800 OHM N-CHANNEL |
|
FS10KM-06-AV#B01Rochester Electronics |
HIGH SPEED SWITCHING N-CHANNEL |
|
FS50KM-2-AX#204Rochester Electronics |
DISCRETE / POWER MOSFET |
|
DMC3025LDV-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 15A POWERDI3333-8 |
|
IAUC60N04S6L045HATMA1IR (Infineon Technologies) |
IAUC60N04S6L045HATMA1 |