English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | 4 N-Channel (H-Bridge) |
| 场效应管特征: | Silicon Carbide (SiC) |
| 漏源电压 (vdss): | 500V |
| 电流 - 连续漏极 (id) @ 25°c: | 46A |
| rds on (max) @ id, vgs: | 90mOhm @ 23A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 2.5mA |
| 栅极电荷 (qg) (max) @ vgs: | 123nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 5590pF @ 25V |
| 功率 - 最大值: | 357W |
| 工作温度: | -40°C ~ 150°C (TJ) |
| 安装类型: | Chassis Mount |
| 包/箱: | SP4 |
| 供应商设备包: | SP4 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MAX8791AGTA+Rochester Electronics |
SINGLE-PHASE, SYNCHRONOUS MOSFET |
|
|
5HP01M-TL-EXRochester Electronics |
MOSFET P-CH 50V 0.07A MCP3 |
|
|
DMNH6021SPDWQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 41V-60V POWERDI506 |
|
|
RFD14N05S2515Rochester Electronics |
14A, 50V, 0.1OHM, N-CHANNEL, |
|
|
MRF6V2300NR5578Rochester Electronics |
N CHANNEL ENHANCEMENT-MODE RF PO |
|
|
FDPC1002SSanyo Semiconductor/ON Semiconductor |
MOSFET |
|
|
UPA2451CTL-E1-ARochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
|
2SK3618-TL-ERochester Electronics |
N-CHANNEL MOSFET |
|
|
APTM20HM16FTGRoving Networks / Microchip Technology |
MOSFET 4N-CH 200V 104A SP4 |
|
|
ADP3415LRMZ-REEL-ADRochester Electronics |
DUAL MOSFET DRIVER W/BOOTSTRAPPI |
|
|
APTM10DSKM19T3GRoving Networks / Microchip Technology |
MOSFET 2N-CH 100V 70A SP3 |
|
|
FSS275-TL-E-SARochester Electronics |
N-CHANNEL SILICON MOSFET |
|
|
FAN5009AMXRochester Electronics |
HALF BRIDGE BASED MOSFET DRIVER |
