RES 274 OHM 1/4W 1% AXIAL
HEATSINK 70X70X25MM XCUT T412
DIODE GP 600V 1200A DO200AA R62
MOSFET 2N-CH 100V 495A SP6
类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | 2 N-Channel (Dual) |
场效应管特征: | Standard |
漏源电压 (vdss): | 100V |
电流 - 连续漏极 (id) @ 25°c: | 495A |
rds on (max) @ id, vgs: | 2.5mOhm @ 200A, 10V |
vgs(th) (最大值) @ id: | 4V @ 10mA |
栅极电荷 (qg) (max) @ vgs: | 1360nC @ 10V |
输入电容 (ciss) (max) @ vds: | 40000pF @ 25V |
功率 - 最大值: | 1250W |
工作温度: | -40°C ~ 150°C (TJ) |
安装类型: | Chassis Mount |
包/箱: | SP6 |
供应商设备包: | SP6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
ISL6605CRR5151Rochester Electronics |
HALF BRIDGE BASED MOSFET DRIVER, |
|
CPH5614-TL-E-ONRochester Electronics |
N-CHANNEL SILICON MOSFET |
|
2SJ664-ERochester Electronics |
P-CHANNEL SILICON MOSFET |
|
MCH5802-TL-ERochester Electronics |
P-CHANNEL SILICON MOSFET |
|
IRF84093Rochester Electronics |
7A, 450V, 0.85OHM, N-CHANNEL, PO |
|
BUK9V13-40HXNexperia |
BUK9V13-40H - DUAL N-CHANNEL 40 |
|
APTM60A11FT1GRoving Networks / Microchip Technology |
MOSFET 2N-CH 600V 40A SP1 |
|
IAUC60N04S6L030HATMA1IR (Infineon Technologies) |
IAUC60N04S6L030HATMA1 |
|
DMN3022LDG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V-30V POWERDI333 |
|
RJK03D3DPA-00#J53Rochester Electronics |
N CHANNEL 30V, 40A, POWER SWITCH |
|
NTMFD6H846NLT1GSanyo Semiconductor/ON Semiconductor |
DUAL N-CHANNEL POWER MOSFET 80V, |
|
2SK2788VY90TRRochester Electronics |
2A, 60V, N-CHANNEL MOSFET |
|
FDWS9520L-F085Sanyo Semiconductor/ON Semiconductor |
PT8P 40V LL DUAL PQFN56 |