English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 场效应管特征: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 功率 - 最大值: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DMN63D1LV-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2 N-CH 60V 550MA SOT563 |
|
|
IRF442119URochester Electronics |
7A, 500V, 1.1OHM, N-CHANNEL, |
|
|
DMN3061SVT-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 25V~30V TSOT26 |
|
|
APTC60AM83B1GMicrosemi |
MOSFET 3N-CH 600V 36A SP1 |
|
|
DMN5L06VK-7-GZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH SOT23 |
|
|
LP8M3FP8TB1ROHM Semiconductor |
MOSFET N-CH SOP8G |
|
|
APTM120H57FTGMicrosemi |
MOSFET 4N-CH 1200V 17A SP4 |
|
|
VWM350-0075PWickmann / Littelfuse |
MOSFET 6N-CH 75V 340A V2 |
|
|
APTC60DSKM45CT1GMicrosemi |
MOSFET 2N-CH 600V 49A SP1 |
|
|
RJM0603JSC-00#13Renesas Electronics America |
MOSFET 3N/3P-CH 60V 20A HSOP |
|
|
FDSS2407-SB82086PSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 60V 3.3A 8-SOIC |
|
|
APTC60AM42F2GMicrosemi |
MOSFET 2N-CH 600V 66A SP2 |
|
|
FDMS3622SF121Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CHANNEL POWER56 |
