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| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | - |
| 场效应管特征: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 功率 - 最大值: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
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INTEGRATED CIRCUIT |
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LN100LA-GRoving Networks / Microchip Technology |
MOSFET 2N-CH 1200V |
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APTM10HM09FTGMicrosemi |
MOSFET 4N-CH 100V 139A SP4 |
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IRF6702M2DTRPBFIR (Infineon Technologies) |
MOSFET 2N-CH 30V 15A DIRECTFET |
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BUK9MFF-65PSS,518Nexperia |
9605 AUTO TRENCH PLUS |
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MOSFET 2N-CH 1000V 19A SP1 |
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GWM100-0085X1-SMDWickmann / Littelfuse |
MOSFET 6N-CH 85V 103A ISOPLUS |
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VMM90-09PWickmann / Littelfuse |
MOSFET 2N-CH 900V 85A Y3-LI |
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64-2013PBFIR (Infineon Technologies) |
IC MOSFET |
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APTC60DDAM45CT1GMicrosemi |
MOSFET 2N-CH 600V 49A SP1 |
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QJD1210SA2Powerex, Inc. |
MOSFET 2N-CH 1200V 100A SIC |
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APTM20DUM10TGMicrosemi |
MOSFET 2N-CH 200V 175A SP4 |
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FDC6020CSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 20V 6SSOT |
