类型 | 描述 |
---|---|
系列: | HEXFET® |
包裹: | Bulk |
零件状态: | Obsolete |
场效应管类型: | 4 N-Channel (H-Bridge) |
场效应管特征: | Standard |
漏源电压 (vdss): | 500V |
电流 - 连续漏极 (id) @ 25°c: | 31A |
rds on (max) @ id, vgs: | 220mOhm @ 19A, 10V |
vgs(th) (最大值) @ id: | 6V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 160nC @ 10V |
输入电容 (ciss) (max) @ vds: | 7210pF @ 25V |
功率 - 最大值: | 1140W |
工作温度: | -40°C ~ 150°C (TJ) |
安装类型: | Chassis Mount |
包/箱: | 16-MTP Module |
供应商设备包: | 16-MTP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
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