类型 | 描述 |
---|---|
系列: | CoolMOS™ |
包裹: | Tray |
零件状态: | Obsolete |
场效应管类型: | 2 N-Channel (Half Bridge) |
场效应管特征: | Super Junction |
漏源电压 (vdss): | 900V |
电流 - 连续漏极 (id) @ 25°c: | 59A |
rds on (max) @ id, vgs: | 60mOhm @ 52A, 10V |
vgs(th) (最大值) @ id: | 3.5V @ 6mA |
栅极电荷 (qg) (max) @ vgs: | 540nC @ 10V |
输入电容 (ciss) (max) @ vds: | 13600pF @ 100V |
功率 - 最大值: | 462W |
工作温度: | -40°C ~ 150°C (TJ) |
安装类型: | Chassis Mount |
包/箱: | SP1 |
供应商设备包: | SP1 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
EFC2J017NUZTDGSanyo Semiconductor/ON Semiconductor |
MOSFET 2 N-CHANNEL 6WLCSP |
|
SP8M24FU7TB1ROHM Semiconductor |
MOSFET N/P-CH 8SOP |
|
PMDPB760ENXWeEn Semiconductors Co., Ltd |
MOSFET AXIAL |
|
UPA2381AT1P-E1-ARenesas Electronics America |
MOSFET N-CH DUAL LGA |
|
APTMC120TAM17CTPAGRoving Networks / Microchip Technology |
MOSFET 6N-CH 1200V 147A SP6P |
|
APTC80DDA29T3GMicrosemi |
MOSFET 2N-CH 800V 15A SP3 |
|
IRF6156IR (Infineon Technologies) |
MOSFET 2N-CH 20V 6.5A FLIP-FET |
|
VQ2001P-2Vishay / Siliconix |
MOSFET 4P-CH 30V 0.6A 14DIP |
|
UPA2301T1P-E1-A#YK1Renesas Electronics America |
MOSFET |
|
APTM100A40FT1GMicrosemi |
MOSFET 2N-CH 1000V 21A SP1 |
|
APTC90AM602GMicrosemi |
MOSFET 2N-CH 900V 59A SP2 |
|
APTMC120HRM40CT3AGRoving Networks / Microchip Technology |
POWER MODULE - SIC MOSFET |
|
GWM160-0055X1-SLWickmann / Littelfuse |
MOSFET 6N-CH 55V 150A ISOPLUS |