English
简体中文
CAP CER 330PF 1KV X7R 1210
CAP CER 0.027UF 1KV X7R 1812
RELAY GEN PURPOSE SPST 16A 5V
MOSFET 2N-CH 100V 11A TO220-5
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 100V |
| 电流 - 连续漏极 (id) @ 25°c: | 11A (Tc) |
| rds on (max) @ id, vgs: | 72.5mOhm @ 6.6A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 18nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 490pF @ 50V |
| 功率 - 最大值: | 18W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | TO-220-5 Full Pack (Formed Leads) |
| 供应商设备包: | TO-220-5 Full-Pak |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
GWM100-01X1-SLWickmann / Littelfuse |
MOSFET 6N-CH 100V 90A ISOPLUS |
|
|
APTC60DSKM70CT1GMicrosemi |
MOSFET 2N-CH 600V 39A SP1 |
|
|
APTM20DHM16TGMicrosemi |
MOSFET 2N-CH 200V 104A SP4 |
|
|
FDC6020C_F077Sanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 20V 6-SSOP |
|
|
APTM100H80FT1GMicrosemi |
MOSFET 4N-CH 1000V 11A SP1 |
|
|
APTMC120AM09CT3AGRoving Networks / Microchip Technology |
MOSFET 2N-CH 1200V 295A SP3F |
|
|
AO4600CLAlpha and Omega Semiconductor, Inc. |
MOSFET N/P-CH 30V 8SOIC |
|
|
2N7002DW-7-GZetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 60V SOT-363 |
|
|
APTC90DSK12T1GMicrosemi |
MOSFET 2N-CH 900V 30A SP1 |
|
|
EFC4622R-R-W-E-TRSanyo Semiconductor/ON Semiconductor |
INTEGRATED CIRCUIT |
|
|
UPA2351T1P-E4-ARenesas Electronics America |
MOSFET N-CH DUAL LGA |
|
|
FDG6304P-XSanyo Semiconductor/ON Semiconductor |
INTEGRATED CIRCUIT |
|
|
GMM3X160-0055X2-SMDSAMWickmann / Littelfuse |
MOSFET 6N-CH 55V 150A 24-SMD |