English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 40V |
| 电流 - 连续漏极 (id) @ 25°c: | 34A (Tc) |
| rds on (max) @ id, vgs: | 11.3mOhm @ 10A, 10V |
| vgs(th) (最大值) @ id: | 2.7V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 16nC @ 4.5V |
| 输入电容 (ciss) (max) @ vds: | 1950pF @ 20V |
| 功率 - 最大值: | 21W |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-PowerSMD, Flat Leads |
| 供应商设备包: | 8-DFN (5x6) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IXTL2X220N075TWickmann / Littelfuse |
MOSFET 2N-CH 75V 120A I5-PAK |
|
|
APTM20DHM16T3GMicrosemi |
MOSFET 2N-CH 200V 104A SP3 |
|
|
APTM60A23FT1GMicrosemi |
MOSFET 2N-CH 600V 20A SP1 |
|
|
APTM100DUM90GMicrosemi |
MOSFET 2N-CH 1000V 78A SP6 |
|
|
IRF6150IR (Infineon Technologies) |
MOSFET 2P-CH 20V 7.9A FLIP-FET |
|
|
APTC90H12T1GMicrosemi |
MOSFET 4N-CH 900V 30A SP1 |
|
|
SQJ500EPSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 40V DPAK |
|
|
APTC90AM60SCTGMicrosemi |
MOSFET 2N-CH 900V 59A SP4 |
|
|
UPA1981TE-T1-ARenesas Electronics America |
MOSFET |
|
|
UPA2385T1P-E1-ARenesas Electronics America |
MOSFET N-CH |
|
|
APTM50DUM35TGMicrosemi |
MOSFET 2N-CH 500V 99A SP4 |
|
|
KGF6N05D-400Intersil (Renesas Electronics America) |
IC MOSFET N-CH |
|
|
GWM220-004P3-SMD SAMWickmann / Littelfuse |
MOSFET 6N-CH 40V 180A ISOPLUS |
