类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
场效应管类型: | 2 N-Channel (Dual) Asymmetrical |
场效应管特征: | Standard |
漏源电压 (vdss): | 100V |
电流 - 连续漏极 (id) @ 25°c: | 139A |
rds on (max) @ id, vgs: | 10mOhm @ 69.5A, 10V |
vgs(th) (最大值) @ id: | 4V @ 2.5mA |
栅极电荷 (qg) (max) @ vgs: | 350nC @ 10V |
输入电容 (ciss) (max) @ vds: | 9875pF @ 25V |
功率 - 最大值: | 390W |
工作温度: | -40°C ~ 150°C (TJ) |
安装类型: | Chassis Mount |
包/箱: | SP4 |
供应商设备包: | SP4 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
UPA2384T1P-E1-A#YK1Renesas Electronics America |
MOSFET N-CH |
|
VQ3001P-E3Vishay / Siliconix |
MOSFET 2N/2P-CH 30V 14DIP |
|
SIF912EDZ-T1-E3Vishay / Siliconix |
MOSFET 2N-CH 30V 7.4A 6-POWERPAK |
|
FDMD8430Sanyo Semiconductor/ON Semiconductor |
FET ENGR DEV-NOT REL |
|
VQ1001PVishay / Siliconix |
MOSFET 4N-CH 30V 0.83A 14DIP |
|
UPA1764G(0)-E1-AZRenesas Electronics America |
TRANSISTOR |
|
SP8K33TB1ROHM Semiconductor |
MOSFET 2N-CH 60V 8SOP |
|
APTM20DUM05TGMicrosemi |
MOSFET 2N-CH 200V 333A SP8 |
|
APTMC120AM20CT1AGRoving Networks / Microchip Technology |
MOSFET 2N-CH 1200V 143A SP1 |
|
GMM3X100-01X1-SMDSAMWickmann / Littelfuse |
MOSFET 6N-CH 100V 90A 24-SMD |
|
APTM50DHM35GMicrosemi |
MOSFET 2N-CH 500V 99A SP6 |
|
EFC2J003NUZTCGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 12V DUAL WLCSP6 |
|
APTC90H12T2GMicrosemi |
MOSFET 4N-CH 900V 30A SP2 |