TVS DIODE 10.3V 16.3V DO219AB
RF PFET, 1-ELEMENT, L BAND, SILI
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
晶体管型: | LDMOS |
频率: | 1.2GHz ~ 1.4GHz |
获得: | 17dB |
电压测试: | 50 V |
额定电流(安培): | 42A |
噪声系数: | - |
电流测试: | 100 mA |
功率输出: | 250W |
额定电压: | 100 V |
包/箱: | SOT-502A |
供应商设备包: | LDMOST |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
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