类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
晶体管型: | 2 N-Channel (Dual) |
频率: | 100MHz ~ 500MHz |
获得: | 8dB |
电压测试: | 28 V |
额定电流(安培): | 16A |
噪声系数: | - |
电流测试: | 400 mA |
功率输出: | 150W |
额定电压: | 65 V |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
LET9045CSTMicroelectronics |
MOSFET N-CH 80V 9A M-250 |
|
MMRF1004NR1NXP Semiconductors |
RF MOSFET LDMOS 28V TO270-2 |
|
AFT05MS031NR1NXP Semiconductors |
FET RF 40V 520MHZ TO-270-2 |
|
AFV10700HSR5NXP Semiconductors |
RF MOSFET LDMOS DL 50V NI780S-4L |
|
MRF6S19060NR1NXP Semiconductors |
FET RF 68V 1.93GHZ TO270-4 |
|
IRFAF20Rochester Electronics |
N-CHANNEL HERMETIC MOS HEXFET |
|
BLU6H0410L-600P,11Ampleon |
RF FET LDMOS 110V 21DB SOT539A |
|
BF1009SRE6327HTSA1Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
BLF888DUAmpleon |
RF FET LDMOS 104V 21DB SOT539A |
|
SAV-581+ |
SMT LOW NOISE AMPLIFIER, 45 - 60 |
|
MRF6S19120HR5Rochester Electronics |
FET RF 68V 1.99GHZ NI-780 |
|
MRFE6S9201HSR5Rochester Electronics |
FET RF 66V 880MHZ NI-780S |
|
BLA9G1011LS-300GUAmpleon |
RF MOSFET LDMOS 32V SOT502E |