类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
晶体管型: | N-Channel Dual Gate |
频率: | 400MHz |
获得: | 29dB |
电压测试: | 5 V |
额定电流(安培): | 30mA |
噪声系数: | 1dB |
电流测试: | 15 mA |
功率输出: | - |
额定电压: | 10 V |
包/箱: | SC-82A, SOT-343 |
供应商设备包: | CMPAK-4 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MRF8P26080HSR3NXP Semiconductors |
FET RF 2CH 65V 2.62GHZ NI780S-4 |
|
PD55003L-ESTMicroelectronics |
TRANSISTOR RF 5X5 POWERFLAT |
|
MMRF1304NR1NXP Semiconductors |
FET RF 133V 512MHZ TO270-2 |
|
PD57018TR-ESTMicroelectronics |
TRANSISTOR RF POWERSO-10 |
|
MRF21010LR1NXP Semiconductors |
FET RF 65V 2.17GHZ NI-360 |
|
BLF8G22LS-220JAmpleon |
RF FET LDMOS 65V 17DB SOT502B |
|
AFT26P100-4WSR3Rochester Electronics |
RF N CHANNEL, MOSFET |
|
ON5234,118Rochester Electronics |
ON5234 - MOSFET |
|
PD85015STR-ESTMicroelectronics |
TRANS RF N-CH FET POWERSO-10RF |
|
MMRF1016HR5NXP Semiconductors |
FET RF 2CH 120V 225MHZ |
|
BLF8G27LS-140,118Ampleon |
RF FET LDMOS 65V 17.4DB SOT502B |
|
IRF323Rochester Electronics |
N-CHANNEL HERMETIC MOS HEXFET |
|
BLF7G24LS-160P,112Rochester Electronics |
RF PFET, 2-ELEMENT, S BAND, SILI |