CAP TANT 4.7UF 20% 6.3V 0805
RF FET LDMOS 65V 18.5DB SOT502B
LOW NOISE, MONOLITHIC DUAL, N-CH
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
晶体管型: | LDMOS |
频率: | 2.11GHz ~ 2.17GHz |
获得: | 18.5dB |
电压测试: | 28 V |
额定电流(安培): | - |
噪声系数: | - |
电流测试: | 1.62 A |
功率输出: | 55W |
额定电压: | 65 V |
包/箱: | SOT-502B |
供应商设备包: | SOT502B |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MMRF1008HR5NXP Semiconductors |
FET RF 100V 1.03GHZ NI-780 |
|
MMRF1308HR5NXP Semiconductors |
FET RF 2CH 133V 230MHZ NI1230 |
|
PD54003-ESTMicroelectronics |
FET RF 25V 500MHZ PWRSO10 |
|
BLC8G27LS-180AVZAmpleon |
RF FET LDMOS 65V 14DB SOT12753 |
|
BLF184XRGQAmpleon |
RF FET LDMOS 135V 23DB SOT1214C |
|
30A01M-TL-ERochester Electronics |
BIP PNP 0.3A 30V |
|
MGSF2N02ELT1HRochester Electronics |
NFET SOT23 20V 2.8A 85MO |
|
2SK3557-7-TB-ESanyo Semiconductor/ON Semiconductor |
RF MOSFET N-CH JFET 5V 3CP |
|
AFT18H356-24SR6NXP Semiconductors |
FET RF 2CH 65V 1.88GHZ NI1230-4 |
|
MRF6S23140HR3Rochester Electronics |
RF S BAND, N-CHANNEL |
|
AFT27S010NT1NXP Semiconductors |
FET RF NCH 65V 2700MHZ PLD1.5W |
|
NE3503M04-T2B-ARochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
BLF6G22LS-130,112Ampleon |
RF FET LDMOS 65V 17DB SOT502B |