类型 | 描述 |
---|---|
系列: | GaN |
包裹: | Tray |
零件状态: | Not For New Designs |
晶体管型: | HEMT |
频率: | 2.3GHz ~ 2.7GHz |
获得: | 12.5dB |
电压测试: | 28 V |
额定电流(安培): | - |
噪声系数: | - |
电流测试: | 500 mA |
功率输出: | 130W |
额定电压: | 84 V |
包/箱: | 440162 |
供应商设备包: | 440162 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BLP0427M9S20ZAmpleon |
BLP0427M9S20Z/SOT1482/REELDP |
|
MRF5S19060MR1NXP Semiconductors |
FET RF 65V 1.99GHZ TO-270-4 |
|
BLF189XRBUAmpleon |
RF MOSFET SOT539 TRAY |
|
ARF463AGRoving Networks / Microchip Technology |
RF PWR MOSFET 500V 9A TO-247 |
|
MMRF1011HSR5NXP Semiconductors |
FET RF 100V 1.4GHZ |
|
BF909WR,115Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
STAC2942BWSTMicroelectronics |
TRANS RF PWR N-CH 350W STAC244B |
|
VRF154FLRoving Networks / Microchip Technology |
MOSFET RF PWR N-CH 50V 600W T2 |
|
BLF881,112Ampleon |
RF FET LDMOS 104V 21DB SOT467C |
|
BLF8G20LS-160VJAmpleon |
RF FET LDMOS 65V 20DB SOT1239B |
|
MMRF1005HSR5NXP Semiconductors |
FET RF 120V 1.3GHZ NI-780S |
|
AFV141KHSR5NXP Semiconductors |
IC TRANS RF LDMOS |
|
BLC8G27LS-180AVYAmpleon |
RF FET LDMOS 65V 14DB SOT12753 |