English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 晶体管型: | HFET |
| 频率: | 12GHz |
| 获得: | 12.5dB |
| 电压测试: | 2 V |
| 额定电流（安培）: | 88mA |
| 噪声系数: | 0.3dB |
| 电流测试: | 10 mA |
| 功率输出: | 14dBm |
| 额定电压: | 4 V |
| 包/箱: | 4-SMD, Flat Leads |
| 供应商设备包: | S02 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BLF6G38-10G,112Ampleon |
RF FET LDMOS 65V 14DB SOT975C |
|
MRF6P18190HR6Rochester Electronics |
RF K BAND, N-CHANNEL |
|
BLC9H10XS-600AZAmpleon |
BLC9H10XS-600A/SOT1250/TRAYDP |
|
BLF8G22LS-140UAmpleon |
RF FET LDMOS 65V 18.5DB SOT502B |
|
3SK292(TE85R,F)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 12.5 30MA SMQ |
|
AFT27S012NT1NXP Semiconductors |
AIRFAST RF POWER LDMOS TRANSISTO |
|
NE5550979A-T1-ARochester Electronics |
RF N-CHANNEL POWER MOSFET |
|
AFT05MS031GNR1NXP Semiconductors |
FET RF 40V 520MHZ TO270-2G |
|
BLS6G3135-120,112Ampleon |
RF FET LDMOS 60V 11DB SOT502A |
|
PTFA210701FV4R250XTMA1IR (Infineon Technologies) |
IC FET RF LDMOS 70W H-37265-2 |
|
PTFB191501FV1XWSA1IR (Infineon Technologies) |
FET RF LDMOS 150W H37248-2 |
|
PTFA041501HL V1IR (Infineon Technologies) |
IC FET RF LDMOS 150W PG-64248-2 |
|
MRF7S19080HSR3NXP Semiconductors |
FET RF 65V 1.99GHZ NI-780S |
