类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
晶体管型: | LDMOS |
频率: | 945MHz |
获得: | 16.5dB |
电压测试: | 28 V |
额定电流(安培): | 2.5A |
噪声系数: | - |
电流测试: | 100 mA |
功率输出: | 18W |
额定电压: | 65 V |
包/箱: | PowerSO-10 Exposed Bottom Pad |
供应商设备包: | 10-PowerSO |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SD2931-10STMicroelectronics |
TRANS RF N-CH HF/VHF/UHF M174 |
|
PTFA212401F V4 R250IR (Infineon Technologies) |
IC FET RF LDMOS 240W H-37260-2 |
|
MRFG35005ANT1NXP Semiconductors |
FET RF 15V 3.55GHZ PLD-1.5 |
|
BF991,215NXP Semiconductors |
MOSFET NCH DUAL GATE 20V SOT143B |
|
LET9150STMicroelectronics |
MOSFET N-CH 80V 20A M-246 |
|
PTFA092213FLV5R250XTMA1IR (Infineon Technologies) |
IC FET RF LDMOS H-34288-6 |
|
BLF548,112Ampleon |
RF FET 2 NC 65V 11DB SOT262A2 |
|
BLF6G27LS-100,112Ampleon |
RF FET LDMOS 65V SOT502A |
|
SD2903STMicroelectronics |
TRANS RF N-CH HF/VHF/UHF M229 |
|
MRF5S9100MBR1NXP Semiconductors |
FET RF 68V 880MHZ TO-272-4 |
|
LET9060STMicroelectronics |
IC RF POWER MOSFET N-CH PWRSO10 |
|
BLF175,112Ampleon |
RF FET NCHA 125V 20DB SOT123A |
|
BF1101,215NXP Semiconductors |
MOSFET N-CH 7V 30MA SOT143B |