TVS DIODE 128V 207V DO214AA
RF FET LDMOS 65V 19DB SOT502B
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
晶体管型: | LDMOS |
频率: | 1.93GHz ~ 1.99GHz |
获得: | 19dB |
电压测试: | 28 V |
额定电流(安培): | 18A |
噪声系数: | - |
电流测试: | 550 mA |
功率输出: | 29.5W |
额定电压: | 65 V |
包/箱: | SOT-502B |
供应商设备包: | SOT502B |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
PTFA261301E V1IR (Infineon Technologies) |
IC FET RF LDMOS 130W H-30260-2 |
|
BLF6G27-10G,112Ampleon |
RF FET LDMOS 65V 19DB SOT975C |
|
BLF8G20LS-200V,115Ampleon |
RF FET LDMOS 65V 17DB SOT1120B |
|
BLF7G22L-200,112Ampleon |
RF FET LDMOS 65V 18.5DB SOT502A |
|
PD84008S-ESTMicroelectronics |
TRANS RF N-CH FET POWERSO-10RF |
|
MRF7S15100HR5NXP Semiconductors |
FET RF 65V 1.51GHZ NI780 |
|
PTFA092211FLV4R250XTMA1IR (Infineon Technologies) |
IC FET RF LDMOS |
|
PTFA092211ELV4R250XTMA1IR (Infineon Technologies) |
FET RF LDMOS 220W H33288-3 |
|
2N5246_D74ZSanyo Semiconductor/ON Semiconductor |
JFET N-CH 30V 7MA TO92 |
|
BLF8G20LS-260A,112Ampleon |
RF FET LDMOS 65V 15.9DB SOT539B |
|
NE3513M04-T2-ACEL (California Eastern Laboratories) |
FET RF 4V 12GHZ M04 4SMD |
|
2N5485_D27ZSanyo Semiconductor/ON Semiconductor |
JFET N-CH 25V 10MA TO92 |
|
PD55008STR-ESTMicroelectronics |
FET RF 40V 500MHZ PWRSO-10 |