类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
晶体管型: | E-pHEMT |
频率: | 2GHz |
获得: | 16dB |
电压测试: | 4.5 V |
额定电流(安培): | 500mA |
噪声系数: | 1.5dB |
电流测试: | 200 mA |
功率输出: | 27dBm |
额定电压: | 7 V |
包/箱: | TO-243AA |
供应商设备包: | SOT-89 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
PTFA092201FV4R250XTMA1IR (Infineon Technologies) |
IC FET RF LDMOS 220W H-37260-2 |
|
BLF6G20-180PN,112Ampleon |
RF FET LDMOS 65V 18DB SOT539A |
|
PTFA261702E V1IR (Infineon Technologies) |
IC FET RF LDMOS 170W H-30275-4 |
|
PTFA190451FV4R250XTMA1IR (Infineon Technologies) |
IC FET RF LDMOS 45W H-37265-2 |
|
MRFE6S9130HR5NXP Semiconductors |
FET RF 66V 880MHZ NI-780 |
|
PTFA260451E V1IR (Infineon Technologies) |
IC FET RF LDMOS 45W H-30265-2 |
|
BG5412KH6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH DUAL 8V 25MA SOT363 |
|
NE3508M04-ACEL (California Eastern Laboratories) |
FET RF 4V 2GHZ 4-TSMM |
|
BLF6G22LS-130,118Ampleon |
RF FET LDMOS 65V 17DB SOT502B |
|
MRF8S26120HSR3NXP Semiconductors |
FET RF 65V 2.69GHZ NI780S |
|
MRF6S27050HR3NXP Semiconductors |
FET RF 68V 2.62GHZ NI-780 |
|
PTFA070601EV4XWSA1IR (Infineon Technologies) |
FET RF LDMOS 60W H36265-2 |
|
MRF7S15100HR3NXP Semiconductors |
FET RF 65V 1.51GHZ NI780 |