类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
晶体管型: | LDMOS |
频率: | 2.17GHz |
获得: | 14dB |
电压测试: | 28 V |
额定电流(安培): | 12A |
噪声系数: | - |
电流测试: | 450 mA |
功率输出: | 6W |
额定电压: | 65 V |
包/箱: | SOT-608A |
供应商设备包: | CDFM2 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
PD55008STMicroelectronics |
FET RF 40V 500MHZ POWERFLAT |
|
NE5531079A-T1A-ACEL (California Eastern Laboratories) |
FET RF 30V 460MHZ 79A |
|
IXZR08N120Wickmann / Littelfuse |
RF MOSFET N-CHANNEL PLUS247-3 |
|
BLF6G38LS-100,112Ampleon |
RF FET LDMOS 65V 13DB SOT502B |
|
MRF7S27130HR3NXP Semiconductors |
FET RF 65V 2.7GHZ NI-780 |
|
BF244A_J35ZSanyo Semiconductor/ON Semiconductor |
JFET N-CH 30V 50MA TO92 |
|
MRF6VP41KHSR7NXP Semiconductors |
FET RF 2CH 110V 450MHZ NI1230S |
|
PD57060STR-ESTMicroelectronics |
FET RF 65V 945MHZ PWRSO-10 |
|
2N5486_D26ZSanyo Semiconductor/ON Semiconductor |
JFET N-CH 25V 20MA TO92 |
|
MRF6P21190HR6NXP Semiconductors |
FET RF 68V 2.12GHZ NI-1230 |
|
BLF6G10LS-135R,118Ampleon |
RF FET LDMOS 65V 21DB SOT502B |
|
NE34018-64-ACEL (California Eastern Laboratories) |
FET RF 4V 2GHZ SOT-343 |
|
BLF7G10L-250,118Ampleon |
RF FET LDMOS 65V 19.5DB SOT502A |