类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
晶体管型: | LDMOS |
频率: | 960MHz |
获得: | 17.5dB |
电压测试: | 28 V |
额定电流(安培): | 9A |
噪声系数: | - |
电流测试: | 300 mA |
功率输出: | 59W |
额定电压: | 80 V |
包/箱: | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) |
供应商设备包: | PowerSO-10RF (Formed Lead) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BF861A,215NXP Semiconductors |
JFET N-CH 25V 6.5MA SOT23 |
|
MRF8P20165WHSR3NXP Semiconductors |
FET RF 2CH 65V 2.01GHZ NI780S4 |
|
150-201N09A-00Wickmann / Littelfuse |
RF MOSFET N-CHANNEL DE150 |
|
BF998,235NXP Semiconductors |
MOSFET N-CH 12V 30MA SOT143 |
|
BF2030RE6814HTSA1IR (Infineon Technologies) |
MOSFET N-CH 8V 40MA SOT-143R |
|
MMRF1017NR3NXP Semiconductors |
FET RF 65V 960MHZ |
|
ATF-55143-BLKGBroadcom |
FET RF 5V 2GHZ SOT-343 |
|
PTFA212401F V4IR (Infineon Technologies) |
IC FET RF LDMOS 240W H-37260-2 |
|
PTFA192001E1V4R250XTMA1IR (Infineon Technologies) |
IC RF POWER TRANSISTOR |
|
MRF6S9060MR1NXP Semiconductors |
FET RF 68V 880MHZ TO-270-2 |
|
BF908WR,115NXP Semiconductors |
MOSFET NCH DUAL GATE 12V CMPAK-4 |
|
MRF6V2010NBR5NXP Semiconductors |
FET RF 110V 220MHZ TO-272-2 |
|
BF1208,115NXP Semiconductors |
MOSFET N-CH DUAL GATE SOT666 |