English
简体中文
RF FET LDMOS 65V 20.9DB SOT12231
BUSBAR2 PHASE+1P25SQMM PIN TYPE
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 晶体管型: | LDMOS (Dual), Common Source |
| 频率: | 724MHz ~ 769MHz |
| 获得: | 20.9dB |
| 电压测试: | 28 V |
| 额定电流（安培）: | - |
| 噪声系数: | - |
| 电流测试: | 1.2 A |
| 功率输出: | 35W |
| 额定电压: | 65 V |
| 包/箱: | SOT-1223-1 |
| 供应商设备包: | 4-HSOPF |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
ATF-36163-BLKGBroadcom |
FET RF 3V 4GHZ SOT-363 |
|
PTFA212001F1V4R250XTMA1IR (Infineon Technologies) |
IC RF POWER TRANSISTOR |
|
PTFA070601FV4XWSA1IR (Infineon Technologies) |
FET RF LDMOS 60W H37265-2 |
|
PTF140451F V1IR (Infineon Technologies) |
IC FET RF LDMOS 45W H-31265 |
|
BLF6G27-10G,118Ampleon |
RF FET LDMOS 65V 19DB SOT975C |
|
PTFA091201FV4XWSA1IR (Infineon Technologies) |
IC FET RF LDMOS 120W H-37248-2 |
|
BF245A,112NXP Semiconductors |
JFET N-CH 30V 6.5MA TO92 |
|
BLF544,112Ampleon |
RF FET NCHA 65V 7DB SOT171A |
|
BLF248,112Ampleon |
RF FET 2 NC 65V 11.5DB SOT262A1 |
|
NE3511S02-ACEL (California Eastern Laboratories) |
HJ-FET NCH 13.5DB S02 |
|
BLP8G10S-45PGJNXP Semiconductors |
TRANS LDMOS 45W 4HSOP |
|
PTF210101M V1IR (Infineon Technologies) |
IC FET RF LDMOS 10W TSSOP-10 |
|
MRF8S21100HR3NXP Semiconductors |
FET RF 65V 2.17GHZ NI780H |