类型 | 描述 |
---|---|
系列: | GaN |
包裹: | Tube |
零件状态: | Obsolete |
晶体管型: | HEMT |
频率: | 2.5GHz ~ 2.7GHz |
获得: | 15dB ~ 16dB |
电压测试: | 50 V |
额定电流(安培): | 12A |
噪声系数: | - |
电流测试: | 1 A |
功率输出: | 200W |
额定电压: | 50 V |
包/箱: | 440162 |
供应商设备包: | 440162 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BLL6G1214LS-250,11Ampleon |
RF FET LDMOS 89V 15DB SOT502B |
|
SD2918STMicroelectronics |
TRANS RF N-CH HF/VHF/UHF M113 |
|
BLF25M612,118Ampleon |
RF FET LDMOS 65V 19DB SOT975B |
|
PN4416Sanyo Semiconductor/ON Semiconductor |
JFET N-CH 30V TO92 |
|
BLF6G27-10GHJAmpleon |
RF FET LDMOS 65V 19DB SOT975C |
|
BLA0912-250,112Ampleon |
RF FET LDMOS 75V 13DB SOT502A |
|
BLF7G24L-160P,118Ampleon |
RF FET LDMOS 65V 18.5DB SOT539A |
|
MRF6V2300NBR1NXP Semiconductors |
FET RF 110V 220MHZ TO-272-4 |
|
MRF6V4300NBR1NXP Semiconductors |
FET RF 110V 450MHZ TO-272-4 |
|
MRFE6S9201HR3NXP Semiconductors |
FET RF 66V 880MHZ NI-780 |
|
MRF7S21080HR5NXP Semiconductors |
FET RF 65V 2.17GHZ NI-780 |
|
BF1102R,115NXP Semiconductors |
FET RF 7V 800MHZ 6TSSOP |
|
BF244B_J35ZSanyo Semiconductor/ON Semiconductor |
JFET N-CH 30V 50MA TO92 |