English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 晶体管型: | - |
| 频率: | - |
| 获得: | - |
| 电压测试: | - |
| 额定电流（安培）: | - |
| 噪声系数: | - |
| 电流测试: | - |
| 功率输出: | - |
| 额定电压: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MHT2025GNR1NXP Semiconductors |
AIRFAST RF POWER LDMOS TRANSISTO |
|
|
MRF7S21210HR5Rochester Electronics |
FET RF 65V 2.17GHZ NI-780 |
|
|
A3T23H450W23SR6NXP Semiconductors |
AIRFAST RF POWER LDMOS TRANSISTO |
|
|
A2T21H140-24SR3NXP Semiconductors |
RF MOSFET LDMOS DUAL 28V OM780-4 |
|
|
MRF6P9220HR3Rochester Electronics |
RF 2-ELEMENT, ULTRA HIGH FREQUE |
|
|
MWT-9FMicrowave Technology |
MEDIUM POWER GAAS MESFET |
|
|
AFT26H160-4S4R3NXP Semiconductors |
FET RF 2CH 65V 2.5GHZ NI880X-4 |
|
|
5LP02M-TL-ERochester Electronics |
PCH 2.5V DRIVE SERIES |
|
|
MRF5S21130HSR5Rochester Electronics |
FET RF 65V 2.17GHZ NI-880S |
|
|
MRFX1K80NR5578Rochester Electronics |
RF POWER FIELD-EFFECT TRANSISTOR |
|
|
A2T26H160-24SR3Rochester Electronics |
RF POWER FIELD-EFFECT TRANSISTOR |
|
|
MCH6622-TL-ERochester Electronics |
NCH+NCH 4V DRIVE SERIES |
|
|
TF009F-ACRochester Electronics |
NCH J-FET |
