English
简体中文
MOSFET N-CH 600V 12A TO247
CONN TERM BLK GROUND 16-24AWG
UM1-TMF (5X5)
IC REG BUCK 1.2V/2.5V DL 16WSON
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MDmesh™ DM2 |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 12A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 295mOhm @ 6A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 20 nC @ 10 V |
| vgs (最大值): | ±25V |
| 输入电容 (ciss) (max) @ vds: | 800 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 90W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247 |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STD9NM40NSTMicroelectronics |
MOSFET N-CH 400V 5.6A DPAK |
|
IPB03N03LB GIR (Infineon Technologies) |
MOSFET N-CH 30V 80A D2PAK |
|
FQPF9N50CRochester Electronics |
MOSFET N-CH 500V 9A TO220-3 |
|
R6009KNJTLROHM Semiconductor |
MOSFET N-CH 600V 9A LPTS |
|
IRL3803STRRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 140A D2PAK |
|
AON4421Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 8A 8DFN |
|
IRLZ14SPBFVishay / Siliconix |
MOSFET N-CH 60V 10A D2PAK |
|
IRF6645TRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 5.7A DIRECTFET |
|
IXTN600N04T2Wickmann / Littelfuse |
MOSFET N-CH 40V 600A SOT227B |
|
RS1E200BNTBROHM Semiconductor |
MOSFET N-CH 30V 20A 8HSOP |
|
STW48N60DM2STMicroelectronics |
MOSFET N-CH 600V 40A TO247 |
|
BSP122,115Nexperia |
MOSFET N-CH 200V 550MA SOT223 |
|
IXFA130N15X3Wickmann / Littelfuse |
MOSFET N-CH 150V 130A TO263AA |