English
简体中文
MOSFET N-CH 700V 12A TO220AB
IC DAC 10BIT V-OUT SOT23-6
FIFO, 16X4, ASYNCHRONOUS
IC EEPROM 256KBIT I2C 8DFN
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 700 V |
| 电流 - 连续漏极 (id) @ 25°c: | 12A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 300mOhm @ 6A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 19 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 960 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 180W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPW60R170CFD7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 14A TO247-3 |
|
FDP100N10Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 75A TO220-3 |
|
STF15N65M5STMicroelectronics |
MOSFET N-CH 650V 11A TO220FP |
|
NTTFS6H850NLTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 14.8A/64A 8WDFN |
|
BSP125L6327Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
STP11N65M2STMicroelectronics |
MOSFET N-CH 650V 7A TO220 |
|
APT60N60SCSGRoving Networks / Microchip Technology |
MOSFET N-CH 600V 60A D3PAK |
|
UPA2717AGR-E1-ATRochester Electronics |
MOSFET P-CH 30V 15A 8PSOP |
|
IPD70P04P409ATMA1IR (Infineon Technologies) |
MOSFET P-CH 40V 73A TO252-3 |
|
APT20M18B2VRGRoving Networks / Microchip Technology |
MOSFET N-CH 200V 100A T-MAX |
|
IRFR1010ZPBFRochester Electronics |
IRFR1010 - 12V-300V N-CHANNEL PO |
|
BSC025N03LSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 25A/100A TDSON |
|
IRL8113PBFRochester Electronics |
HEXFET POWER MOSFET |