English
简体中文
IRFU3707 - HEXFET N-CHANNEL
CONN HEADER SMD R/A 26POS 1.27MM
IC SERIALIZER SINGLE 64QFN
INTELLIGENT 10.1" TFT STARTERKIT
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 56A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 9.5mOhm @ 15A, 10V |
| vgs(th) (最大值) @ id: | 2.25V @ 25µA |
| 栅极电荷 (qg) (max) @ vgs: | 14 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1.15 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 50W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | IPAK (TO-251) |
| 包/箱: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPB057N06NATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 17A/45A D2PAK |
|
IXFK520N075T2Wickmann / Littelfuse |
MOSFET N-CH 75V 520A TO264AA |
|
HUFA75852G3-F085Rochester Electronics |
N-CHANNEL, MOSFET |
|
SIDR140DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 25V 79A/100A PPAK |
|
FDP16AN08A0Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 9 |
|
NTMFS5H600NLT1GRochester Electronics |
SINGLE N CHANNEL POWER MOSFET 60 |
|
IRFZ44NSTRRPBFRochester Electronics |
HEXFET POWER MOSFET |
|
2SK2512-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRL2910SPBFRochester Electronics |
MOSFET N-CH 100V 55A D2PAK |
|
BUK7Y1R7-40HXNexperia |
MOSFET N-CH 40V 120A LFPAK56 |
|
STR1P2UH7STMicroelectronics |
MOSFET P-CH 20V 1.4A SOT-23 |
|
AUIRLR3114ZRochester Electronics |
AUTOMOTIVE POWER MOSFET |
|
FDB8860Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 80A TO263AB |