English
简体中文
MOSFET N-CH 600V 4.5A TO220-3
ALUMINUM STAR KNOB
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | QFET® |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 4.5A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 2.5Ohm @ 2.25A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 19 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 670 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 100W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220-3 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPD70R2K0CEAUMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 4A TO252-3 |
|
IPB180N04S4L01ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 180A TO263-7 |
|
TPS1101DRTexas Instruments |
MOSFET P-CH 15V 2.3A 8SOIC |
|
IPP60R360P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 9A TO220-3 |
|
SSM3K37MFV,L3FToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 20V 250MA VESM |
|
MMBF1374T1Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
SIHF7N60E-GE3Vishay / Siliconix |
MOSFET N-CHANNEL 600V 7A TO220 |
|
FDMS1D4N03SSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 211A 8PQFN |
|
SI4420DYTRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 12.5A 8SO |
|
SQ3419EV-T1_BE3Vishay / Siliconix |
MOSFET P-CH 40V 6.9A 6TSOP |
|
SSR1N60BTM-WSRochester Electronics |
MOSFET N-CH 600V 900MA DPAK |
|
FDC654PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 3.6A SUPERSOT6 |
|
SSM3J372R,LXHFToshiba Electronic Devices and Storage Corporation |
AECQ MOSFET PCH -30V -6A SOT23F |