English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRL40T209ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 300A 8HSOF |
|
CSD18504Q5ATTexas Instruments |
MOSFET N-CH 40V 50A 8VSON |
|
CSD17318Q2Texas Instruments |
MOSFET N-CH 30V 25A 6WSON |
|
2SK3800Sanken Electric Co., Ltd. |
MOSFET N-CH 40V 70A TO220S |
|
NVMFS5A160PLZT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 15A/100A 5DFN |
|
IRFS31N20DPBFRochester Electronics |
MOSFET N-CH 200V 31A D2PAK |
|
IPP65R190E6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 20.2A TO220-3 |
|
PMV52ENEARNexperia |
MOSFET N-CH 30V 3.2A TO236AB |
|
BUK7Y4R4-40EXNexperia |
MOSFET N-CH 40V 100A LFPAK56 |
|
ZVP4424GTAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 240V 480MA SOT223 |
|
RQ6G050ATTCRROHM Semiconductor |
PCH -30V -5A POWER MOSFET - RQ6G |
|
BUK7Y6R0-60EXNexperia |
MOSFET N-CH 60V 100A LFPAK56 |
|
DN2530N8-GRoving Networks / Microchip Technology |
MOSFET N-CH 300V 200MA TO243AA |
