类型 | 描述 |
---|---|
系列: | SuperMESH3™ |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 1050 V |
电流 - 连续漏极 (id) @ 25°c: | 1.4A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 11Ohm @ 600mA, 10V |
vgs(th) (最大值) @ id: | 4.5V @ 50µA |
栅极电荷 (qg) (max) @ vgs: | 13 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 180 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 60W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220 |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
STFW60N65M5STMicroelectronics |
MOSFET N-CH 650V 46A ISOWATT |
|
HAT2054M-EL-ERochester Electronics |
MOSFET N-CH 30V 6.3A 6TSOP |
|
2SB817DRochester Electronics |
P-CHANNEL, MOSFET |
|
SSM3K318R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 2.5A SOT23F |
|
STD37P3H6AGSTMicroelectronics |
MOSFET P-CH 30V 49A DPAK |
|
IPL60R185CFD7AUMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 14A 4VSON |
|
IPP041N12N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 120V 120A TO220-3 |
|
AON6298Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 14.5A/46A 8DFN |
|
2SJ168TE85LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 60V 200MA SC59 |
|
IRF6722MTRPBFRochester Electronics |
MOSFET N-CH 30V 13A/56A DIRECTFT |
|
BUK7Y65-100EXNexperia |
MOSFET N-CH 100V 19A LFPAK56 |
|
IXFH46N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 46A TO247 |
|
CSD19506KTTTexas Instruments |
MOSFET N-CH 80V 200A DDPAK |