English
简体中文
POE SPLITTER 8W 12V DESKTOP
CRYSTAL 26.0000MHZ 18PF SMD
MOSFET N-CH 1000V 2A TO252
TRANSCEIVER ARRAY CXP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 1000 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 9Ohm @ 1A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 15 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 580 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 83W (Tc) |
| 工作温度: | -50°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-252, (D-Pak) |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPB054N08N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 80A D2PAK |
|
SIR662DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 60A PPAK SO-8 |
|
STN3NF06LSTMicroelectronics |
MOSFET N-CH 60V 4A SOT223 |
|
NTD3808NT4GRochester Electronics |
MOSFET N-CH 16V 12A/76A DPAK |
|
FDBL86066-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 185A 8HPSOF |
|
FDD5680Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 8.5A TO252 |
|
STL50NH3LLSTMicroelectronics |
MOSFET N-CH 30V 27A POWERFLAT |
|
FQB7P06TMRochester Electronics |
MOSFET P-CH 60V 7A D2PAK |
|
IRF1405PBFIR (Infineon Technologies) |
MOSFET N-CH 55V 169A TO220AB |
|
IXTK60N50L2Wickmann / Littelfuse |
MOSFET N-CH 500V 60A TO264 |
|
STF17N80K5STMicroelectronics |
MOSFET N-CH 800V 14A TO220FP |
|
STW9N150STMicroelectronics |
MOSFET N-CH 1500V 8A TO247-3 |
|
IXTQ14N60PWickmann / Littelfuse |
MOSFET N-CH 600V 14A TO3P |