English
简体中文
XTAL OSC VCXO 307.695484MHZ
MOSFET N-CH 600V 6A TO220FM
GASKET FAB/FOAM 10X457.2MM RECT
DISCR RAD FOR TOSHIBA TA8104F
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 6A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 15V |
| rds on (max) @ id, vgs: | 936mOhm @ 3A, 15V |
| vgs(th) (最大值) @ id: | 7V @ 800µA |
| 栅极电荷 (qg) (max) @ vgs: | 15.5 nC @ 15 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 410 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 43W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220FM |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPB180P04P4L02ATMA1IR (Infineon Technologies) |
MOSFET P-CH 40V 180A TO263-7 |
|
RM80N20DNRectron USA |
MOSFET N-CHANNEL 20V 80A 8PPAK |
|
TJ40S04M3L,LXHQToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 40V 40A DPAK |
|
RJK1056DPB-00#J5Renesas Electronics America |
MOSFET N-CH 100V 25A LFPAK |
|
SPD30N06S2-23Rochester Electronics |
MOSFET N-CH 55V 30A TO252-3 |
|
SCT2160KECROHM Semiconductor |
SICFET N-CH 1200V 22A TO247 |
|
PSMN017-80BS,118Nexperia |
MOSFET N-CH 80V 50A D2PAK |
|
BSC037N08NS5TATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 22A/100A TDSON |
|
NTD4815N-1GRochester Electronics |
MOSFET N-CH 30V 6.9A/35A IPAK |
|
R6024KNJTLROHM Semiconductor |
MOSFET N-CHANNEL 600V 24A LPTS |
|
IXFP20N50P3MWickmann / Littelfuse |
MOSFET N-CH 500V 8A TO220AB |
|
APT10M25BVRGRoving Networks / Microchip Technology |
MOSFET N-CH 100V 75A TO247 |
|
IXFP72N30X3MWickmann / Littelfuse |
MOSFET N-CH 300V 72A TO220 |