English
简体中文
MOSFET N-CH 200V 24A DPAK
LOW NOISE, N-CHANNEL JFET SWITCH
CONN FFC FPC RCPT 4POS 2.54MM
SMA-SJB/SMA-SJ G174 36I
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 24A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 78mOhm @ 15A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 100µA |
| 栅极电荷 (qg) (max) @ vgs: | 38 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1710 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 144W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-Pak |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRF5805TRPBF-INFRochester Electronics |
IRF5805 - TRANSISTOR |
|
FDD8586Rochester Electronics |
MOSFET N-CH 20V 35A TO252AA |
|
XP231N0201TR-GTorex Semiconductor Ltd. |
MOSFET N-CH 30V 200MA |
|
SIHU7N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 7A IPAK |
|
IRFI9630GPBFVishay / Siliconix |
MOSFET P-CH 200V 4.3A TO220-3 |
|
IRFR9220TRPBF-BE3Vishay / Siliconix |
MOSFET P-CH 200V 3.6A DPAK |
|
IRLR7843TRPBFRochester Electronics |
IRLR7843 - 12V-300V N-CHANNEL PO |
|
FDP120N10Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 74A TO220-3 |
|
TPC8067-H,LQ(SToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 9A 8SOP |
|
SI2309CDS-T1-E3Vishay / Siliconix |
MOSFET P-CH 60V 1.6A SOT23-3 |
|
AUIRF1010ZLRochester Electronics |
MOSFET N-CH 55V 75A TO262 |
|
IRFP448PBFVishay / Siliconix |
MOSFET N-CH 500V 11A TO247-3 |
|
SPD04N60C3ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 4.5A TO252-3 |