English
简体中文
CURR SENSE XFMR 1:1:100 SMD
MOSFET N-CH 600V 11A TO263
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | aMOS5™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 11A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 380mOhm @ 5.5A, 10V |
| vgs(th) (最大值) @ id: | 3.8V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 20 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 955 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 131W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-263 (D2Pak) |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRF1404STRRPBFRochester Electronics |
HEXFET POWER MOSFET |
|
SI7636DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 17A PPAK SO-8 |
|
AUIRFR6215TRLIR (Infineon Technologies) |
MOSFET P-CH 150V 13A DPAK |
|
FDB6035ALRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTLUS4C16NTBGRochester Electronics |
MOSFET N-CH 30V 6.1A 6UDFN |
|
IRFR220PBFVishay / Siliconix |
MOSFET N-CH 200V 4.8A DPAK |
|
AOK2500LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 150V 14A/180A TO247 |
|
NVTFS4C08NWFTWGRochester Electronics |
MOSFET N-CH 30V 17A 8WDFN |
|
STL10N60M2STMicroelectronics |
MOSFET N-CH 600V 5.5A PWRFLAT56 |
|
RM40P07Rectron USA |
MOSFET P-CHANNEL 40V 6.2A 8SOP |
|
DMN3016LK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 12.4A TO252 |
|
IRLR210ATMRochester Electronics |
MOSFET N-CH 200V 2.7A DPAK |
|
IPD040N03LGRochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |