类型 | 描述 |
---|---|
系列: | TrenchMOS™ |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 55 V |
电流 - 连续漏极 (id) @ 25°c: | 65.7A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 16mOhm @ 25A, 10V |
vgs(th) (最大值) @ id: | 4V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 2.245 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 138W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220AB |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DMN53D0LW-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 50V 360MA SOT323 |
|
FDB2552-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N CH 150V 5A TO-263AB |
|
SIR626ADP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 60V 40.4A/165A PPAK |
|
DMN24H11DS-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 240V 270MA SOT23 T&R |
|
RQ3E100MNTB1ROHM Semiconductor |
MOSFET N-CH 30V 10A HSMT8 |
|
FDP2D3N10CRochester Electronics |
MOSFET N-CH 100V 222A TO220-3 |
|
SI4103DY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 14A/16A 8SO |
|
FDB8880-ONRochester Electronics |
11A, 30V, 0.0145OHM, N-CHANNEL, |
|
2SK2738-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
DMPH4029LFG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 40V 8A/22A PWRDI3333 |
|
IRFBC30SPBFVishay / Siliconix |
MOSFET N-CH 600V 3.6A D2PAK |
|
IPB054N06N3GRochester Electronics |
IPB054N06 - 12V-300V N-CHANNEL P |
|
FQPF1N50Rochester Electronics |
MOSFET N-CH 500V 900MA TO220F |