类型 | 描述 |
---|---|
系列: | TrenchFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 110A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 8mOhm @ 30A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 240 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 9200 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 3.75W (Ta), 272W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | TO-263 (D2Pak) |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BSC123N08NS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 11A/55A TDSON |
|
RM20P30D3Rectron USA |
MOSFET P-CHANNEL 30V 20A 8DFN |
|
IRF7458PBFRochester Electronics |
MOSFET N-CH 30V 14A 8SO |
|
BUK9M24-40EXRochester Electronics |
BUK9M24-40E - N-CHANNEL 40 V, 24 |
|
BSC12DN20NS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 200V 11.3A 8TDSON |
|
STU10NM60NSTMicroelectronics |
MOSFET N-CH 600V 10A IPAK |
|
IPP90N06S404AKSA1Rochester Electronics |
MOSFET N-CH 60V 90A TO220-3 |
|
IPP048N04NGRochester Electronics |
IPP048N04 - 12V-300V N-CHANNEL P |
|
FDA28N50FSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 28A TO3PN |
|
DMP32D4SFB-7BZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 400MA 3DFN |
|
BSC090N03LSGRochester Electronics |
BSC090N03 - 12V-300V N-CHANNEL P |
|
RS3E135BNGZETBROHM Semiconductor |
MOSFET N-CHANNEL 30V 9.5A 8SOP |
|
STP14N80K5STMicroelectronics |
MOSFET N-CHANNEL 800V 12A TO220 |