English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 30A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 3mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 50 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 5600 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 5.4W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerPAK® SO-8 |
| 包/箱: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTMFS4C302NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 41A/230A 5DFN |
|
RQ5C060BCTCLROHM Semiconductor |
MOSFET P-CHANNEL 20V 6A TSMT3 |
|
STF20N90K5STMicroelectronics |
MOSFET N-CH 900V 20A TO220FP |
|
CSD19536KCSTexas Instruments |
MOSFET N-CH 100V 150A TO220-3 |
|
2N6763Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, N |
|
APT37M100LRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 37A TO264 |
|
DMP1009UFDFQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 12V 11A 6UDFN |
|
PMN34LN,135Rochester Electronics |
MOSFET N-CH 20V 5.7A 6TSOP |
|
IXTA3N100D2HV-TRLWickmann / Littelfuse |
MOSFET N-CH 1000V 3A TO263HV |
|
IXFH18N100Q3Wickmann / Littelfuse |
MOSFET N-CH 1000V 18A TO247AD |
|
STF28N65M2STMicroelectronics |
MOSFET N-CH 650V 20A TO220FP |
|
NDD03N40Z-1GRochester Electronics |
MOSFET N-CH 400V 2.1A IPAK |
|
AUIRL1404STRLRochester Electronics |
AUTOMOTIVE POWER MOSFET |
