English
简体中文
EMITTER IR 890NM 100MA TO-46
CREE ML-E ON LINEAR BRD WHT
MOSFET N-CH 55V 80A TO263-3-2
IC DRAM 128MBIT PARALLEL 90TFBGA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | OptiMOS™ |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 80A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 5.2mOhm @ 80A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 230µA |
| 栅极电荷 (qg) (max) @ vgs: | 155 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 4.4 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 300W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PG-TO263-3-2 |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRLR024TRVishay / Siliconix |
MOSFET N-CH 60V 14A DPAK |
|
CSD18537NQ5ATTexas Instruments |
MOSFET N-CH 60V 50A 8VSON |
|
FDA20N50-F109Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 22A TO3PN |
|
NP110N04PUK-E1-AYRenesas Electronics America |
MOSFET N-CH 40V 110A TO263-3 |
|
IXTN210P10TWickmann / Littelfuse |
MOSFET P-CH 100V 210A SOT227B |
|
DMP1022UFDF-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 12V 9.5A 6UDFN |
|
SUM50020E-GE3Vishay / Siliconix |
MOSFET N-CH 60V 120A TO263 |
|
STI6N80K5STMicroelectronics |
MOSFET N-CH 800V 4.5A I2PAK |
|
IRF1404ZSPBFRochester Electronics |
MOSFET N-CH 40V 180A D2PAK |
|
IPP320N20N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 200V 34A TO220-3 |
|
2N7000TASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 200MA TO92-3 |
|
GA50JT12-247GeneSiC Semiconductor |
TRANS SJT 1200V 100A TO247AB |
|
IRF7413ZTRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 13A 8SO |