类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 500mA (Ta) |
驱动电压(最大 rds on,最小 rds on): | 2.5V, 4V |
rds on (max) @ id, vgs: | 1.5Ohm @ 10mA, 4V |
vgs(th) (最大值) @ id: | 1.6V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 1.2 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 50 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 350mW (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SOT-23 |
包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SIR464DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 50A PPAK SO-8 |
|
TK6A80E,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 800V 6A TO220SIS |
|
SISS72DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 150V 7A/25.5A PPAK |
|
IRFI4321PBFIR (Infineon Technologies) |
MOSFET N-CH 150V 34A TO220AB FP |
|
ZXMN2A01FTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 1.9A SOT23-3 |
|
YJL3134K-F2-0000HF |
N-CH MOSFET 20V 0.9A SOT-23-3L |
|
AOB1100LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 8A/130A TO263 |
|
NTD5C434NT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 33A/160A DPAK |
|
TK090U65Z,RQToshiba Electronic Devices and Storage Corporation |
DTMOS VI TOLL PD=230W F=1MHZ |
|
STL50N6F7STMicroelectronics |
MOSFET N-CH 60V 50A POWERFLAT |
|
BUK754R0-55B,127Rochester Electronics |
PFET, 75A I(D), 55V, 0.004OHM, 1 |
|
FQAF6N80Rochester Electronics |
MOSFET N-CH 800V 4.4A TO3PF |
|
SUD50P10-43L-E3Vishay / Siliconix |
MOSFET P-CH 100V 37.1A TO252 |